Crystal processing operations

- Automated, grouped and individualized chemical treatment and etching of technological layers utilizing acid-base, organic solvents, and deionized water.

- Diffusion, oxidation, heat treatment. The temperature range of processes is between 400^oC and 1200 ^oC;

- Pyrolytic processes (LP CVD) and plasma (PE CVD) deposition of polysilicon, doped and pure silicon oxide, silicon nitride and silicon oxynitride. Ability to work with the plates with a diameter of 100-150 mm;

- Pulse and multistep rapid thermal annealing;

- Installations for the deposition of multilayer films of metals, para-, ferro-and diamagnetic, dielectric films. Layer thickness of 40A and up to micron;

- Formation of photoresist masks. Resolution is up to 0.3 microns. Field exposure 17.9 x25, 2 mm;

- "Dry" etching the sacrificial layers;

- Implantation of singly ionized impurities with energies from 10 to 200 keV;

- The ability of dual ion implantation of the charge. The dose from 1011 to 1017 atoms / cm ²; doping wafers with a diameter 60-150 mm;